Molecular Beam Epitaxy System (MBE)

Molecular beam epitaxy (MBE) was developed in the early 1970s as a means of growing high-purity epitaxial layers of compound semiconductors. Since that time it has evolved into a popular technique for growing III-V compound semiconductors as well as several other materials. MBE can produce high-quality layers and good control of thickness, doping, and composition.

Because of the high degree of control possible with MBE, it is a valuable tool in the development of sophisticated electronic and optoelectronic devices. This MBE system was produced by the world’s leading research MBE system. Designed for 3” wafers and launched in 1982, it has been continuously developed and improved. The V80H has been field-proven in over 200 installations worldwide. It can routinely produce the highest quality material with unmatched ease-of- achievement and reproducibility. Designed to fully expand the dimensional controls possible with MBE, the V80H can be configured for III-V, II-VI or other advanced materials systems.


V-80H (VG Semicon Inc. )