UHV Sputtering System

The UHV (Ultra High Vacuum) sputtering system is composed of 2 chambers, one is sample exchange chamber, and the other is deposition chamber. These 2 chambers are connected by load-lock system, which is designed for loading samples into UHV systems. Multiple magnetron sputtering sources (8 sources, 2 inch in diameter) are arranged in a specific circular pattern and they are aimed at a common focal point.

When a substrate is transfered from a sample exchange chamber by a transfer rod, and then the samples is placed in the vicinity of this focal point and rotated on its own axis, it is possible to deposit highly uniform films, such as single layers, multilayers and co-deposited alloy films. A technique used to deposit thin films of a material onto a substrate. By first creating a gaseous plasma and then accelerating the ions from this plasma into some targets (source materials), the source material is eroded by the arriving ions via energy transfer and is ejected in the form of neutral particles - either individual atoms, clusters of atoms or molecules. As these neutral particles are ejected they will travel in a straight line unless they come into contact with something - other particles or a nearby surface.


MPS-2000-C8 (ULVAC Inc. )